philips semiconductors preliminary specification three quadrant triacs bta216x series c high commutation general description quick reference data glass passivated high commutation symbol parameter max. max. max. unit triacs in a plastic envelope intended for use in circuits where high static and bta216x- 500c 600c 800c dynamic dv/dt and high di/dt can v drm repetitive peak off-state 500 600 800 v occur. these devices will commutate voltages the full rated rms current at the i t(rms) rms on-state current 16 16 16 a maximum rated junction temperature, i tsm non-repetitive peak on-state 140 140 140 a without the aid of a snubber. current pinning - sot186a pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 -800 v drm repetitive peak off-state - 500 1 600 1 800 v voltages i t(rms) rms on-state current full sine wave; - 16 a t mb 38 ?c i tsm non-repetitive peak full sine wave; on-state current t j = 25 ?c prior to surge t = 20 ms - 140 a t = 16.7 ms - 150 a i 2 ti 2 t for fusing t = 10 ms - 98 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; 100 a/ m s on-state current after di g /dt = 0.2 a/ m s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms - 0.5 w period t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 12 3 case 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. october 1997 1 rev 1.000
philips semiconductors preliminary specification three quadrant triacs bta216x series c high commutation thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 k/w without heatsink compound - - 5.5 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current 2 v d = 12 v; i t = 0.1 a t2+ g+ 2 18 35 ma t2+ g- 2 21 35 ma t2- g- 2 34 35 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - - 20 ma t2+ g- - - 30 ma t2- g- - - 20 ma i h holding current v d = 12 v; i gt = 0.1 a - - 15 ma v t on-state voltage i t = 20 a - 1.2 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; exponential 1000 - v/ m s off-state voltage waveform; gate open circuit di com /dt critical rate of change of v dm = 400 v; t j = 125 ?c; i t(rms) = 16 a; without 3 14 a/ms commutating current snubber; gate open circuit t gt gate controlled turn-on i tm = 20 a; v d = v drm(max) ; i g = 0.1 a; - 2 m s time di g /dt = 5 a/ m s 2 device does not trigger in the t2-, g+ quadrant. october 1997 2 rev 1.000
philips semiconductors preliminary specification three quadrant triacs bta216x series c high commutation mechanical data dimensions in mm net mass: 2 g fig.1. sot186a; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) 1.3 october 1997 3 rev 1.000
philips semiconductors preliminary specification three quadrant triacs bta216x series c high commutation definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. october 1997 4 rev 1.000
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